* Fast Switching
* Low ON Resistance(Rdson≤94mΩ)
* Low Gate Charge (Typical Data:47nC)
* Low Reverse transfer capacitances(Typical:23.4pF)
* 100.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS40N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS40N25A8R

CS40N20A8

CS40N20ANH

CS40N20FA9E

CS40N20FA9H

CS40N20FA9R-G

CS40N27

CS40N045A4

CS400

CS4041

CS4050V-01L

CS40D

CS40L100CT-A

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